参数资料
型号: FDPF5N50NZU
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 500V 3.9A TO-220F
产品目录绘图: MOSFET TO-220F
标准包装: 50
系列: UniFET-II™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 3.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 1.95A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 10V
输入电容 (Ciss) @ Vds: 485pF @ 25V
功率 - 最大: 30W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
产品目录页面: 1608 (CN2011-ZH PDF)
October 2013
FDPF5N50NZU
N-Channel UniFET TM II Ultra FRFET TM MOSFET ?
500 V, 3.9 A, 2.0 ?
Features
? R DS(on) = 1.7 ? (Typ.) @ V GS = 10 V, I D = 1.95 A
? Low Gate Charge (Typ. 9 nC)
? Low C rss (Typ. 4 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
? LCD/LED TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFET TM MOSFET has much superior
body diode reverse recovery performance. Its t rr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDPF5N50NZU
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
3.9*
2.3*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
15*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
135
3.9
7.8
20
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
30
0.24
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDPF5N50NZU
Unit
R ? JC
R ? JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
4.1
62.5
o
C/W
?2010 Fairchild Semiconductor Corporation
FDPF5N50NZU Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数
参数描述
FDPF5N50NZU 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 3.9A TO-220F
FDPF5N50T 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDPF5N50TYDTU 功能描述:MOSFET 500V N-Chan MOSFET UniFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDPF5N50UT 功能描述:MOSFET 500V N-Channel FRFET, Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDPF5N50UTYDTU 制造商:Fairchild Semiconductor Corporation 功能描述: