参数资料
型号: FDPF5N60NZ
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 600V 4.5A TO-220F
标准包装: 50
系列: UniFET-II™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 2.25A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 25V
功率 - 最大: 33W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220F
包装: 管件
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.12
1.08
1.04
1.00
0.96
Figure 8. On-Resistance Variation
vs. Temperature
2.8
2.4
2.0
1.6
1.2
0.92
*Notes:
1. V GS = 0V
2. I D = 250 μ A
0.8
*Notes:
1. V GS = 10V
2. I D = 2.25A
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.88
-80
-40 0 40 80 120
o
160
0.4
-80
-40 0 40 80 120
o
160
Figure 9. Maximum Safe Operating Area
- FDP5N60NZ
50
30 μ s
Figure 10. Maximum Safe Operating Area
- FDPF5N60NZ
30
10
100 μ s
10
30 μ s
100 μ s
1ms
1
Operation in This Area
is Limited by R DS(on)
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
1. T C = 25 C
1. T C = 25 C
2. T J = 150 C
2. T J = 150 C
0.1
*Notes:
o
o
0.1
*Notes:
o
o
DC
0.01
0.1
3. Single Pulse
1 10 100
V DS , Drain-Source Voltage [V]
1000
0.01
0.1
3. Single Pulse
1 10 100 1000 3000
V DS , Drain-Source Voltage [V]
Figure 11. Maximum Drain Current vs.
Case Temperature
5
4
3
2
1
Figure 12. Unclamped Inductive
Switching Capability
8
T J = 25 o C
T J = 125 o C
T C , Case Temperature [ C]
0
25
50 75 100 125
o
150
1
0.01
0.1
t AV , TIME IN AVALANCHE(ms)
1
2
?2011 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. C2
4
www.fairchildsemi.com
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