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参数资料
| 型号： | FDR6674A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 359K |
| 代理商： | FDR6674A |
April 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDR6674A Rev C(W)
FDR6674A
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
11.5 A, 30 V.
R
DS(ON)
= 9.5 m
@ V
GS
= 4.5 V
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
smaller footprint than SO8
D
S
D
D
S
D
G
SuperSOT -8
D
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
30
±
12
11.5
50
1.8
1.0
0.9
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.6674A
FDR6674A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDR6674A | Thermoelectric Cooler Controller |
| FDR6678A | 30V N-Channel PowerTrench MOSFET |
| FDR8305 | CAP CER 4.7UF 25V Y5V 1210 |
| FDR8305N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8308P | CAP CER 1500PF 630VDC U2J 1210 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR6674A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-8 |
| FDR6678A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-R80 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDR8305 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8305N | 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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