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参数资料
| 型号： | FDR8305N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 4500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 215K |
| 代理商： | FDR8305N |
F
FD8305N Rev. C
FDR8305N
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
November 1999
Features
4.5 A, 20 V. R
DS(ON)
= 0.022
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
@ V
GS
= 2.5 V.
Low gate charge (16.2nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
20
±
8
4.5
20
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
T
J
, T
stg
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
W
°
C
-55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
156
40
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
.8305
Device
FDR8305N
Reel Size
13
’’
Tape Width
12mm
Quantity
3000 units
D1
D2
D2
D1
G1
G2
S1
S2
SuperSOT -8
TM
1
5
7
8
6
4
3
2
相关PDF资料 |
PDF描述 |
|---|---|
| FDR8308P | CAP CER 1500PF 630VDC U2J 1210 |
| FDR8321L | CAP CER 2200PF 630VDC U2J 1210 |
| FDR836P | P-Channel 2.5V Specified MOSFET |
| FDR838P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDR840P | Thermoelectric Cooler Controller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR8308P | 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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