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参数资料
| 型号： | FDR838P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 204K |
| 代理商： | FDR838P |
F
FDR838P, Rev. C
FDR838P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
March 1999
Features
-8 A, -20 V. R
DS(
ON
)
= 0.017
@ V
GS
= -4.5 V
R
DS(
ON)
= 0.024
@ V
GS
= -2.5 V
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-8
-50
1.8
1.0
0.9
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.
838P
Device
FDR838P
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
1
5
6
7
8
4
3
2
D
S
D
D
S
D
G
SuperSOT -8
D
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|---|---|
| FDR840P | Thermoelectric Cooler Controller |
| FDW2520C | Thermoelectric Cooler Controller |
| FDR840 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR840P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR842P | P-Channel 1.8V Specified PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR838P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR840 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR840P | 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR842P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR842P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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