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参数资料
| 型号： | FDR842P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 11000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 141K |
| 代理商： | FDR842P |
December 2001
2001 Fairchild Semiconductor Corporation
FDR842P Rev D (W)
FDR842P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
–11 A, –12 V R
DS(ON)
= 9 m
@ V
GS
= –4.5 V
R
DS(ON)
= 12 m
@ V
GS
= –2.5 V
R
DS(ON)
= 16 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
S
D
D
S
D
G
SuperSOT -8
D
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–12
±
8
–11
–50
1.8
1.0
0.9
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDR842P
FDR842P
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR842P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR844P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8508P | 功能描述:MOSFET SSOT-8 P-CH DUAL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8508P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8508PQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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