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参数资料
| 型号： | FDR6678A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 333K |
| 代理商： | FDR6678A |
FDR6678A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
22
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V , V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.8
1.4
2
V
Gate Threshold Voltage
– 4
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 6.8 A
V
GS
= 4.5 V, I
D
= 6.8 A T
J
=125
°
C
V
GS
= 10 V, I
D
= 7.5 A,
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 10 V,
20
29
18
24
40
20
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
40
A
S
I
D
= 7.5 A
30
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1460
227
96
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8
9
35
7
13
3.6
3.6
16
18
58
14
21
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 7.5 A,
V
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
1.5
A
V
SD
V
GS
= 0 V,
I
S
= 1.5 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 70°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 125°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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相关代理商/技术参数 |
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| FDR8308P | 功能描述:MOSFET SSOT-8 P-CH DUAL -20 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
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