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参数资料
| 型号： | FDS2170N3 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 200V N-Channel PowerTrench剖 MOSFET |
| 中文描述： | 0.128 ohm, Si, POWER, FET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 201K |
| 代理商： | FDS2170N3 |
May 2003
FDS2170N3
200V N-Channel PowerTrench
MOSFET
2002 Fairchild Semiconductor Corporation
FDS2170N3 Rev B1W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
3.0 A, 200 V. R
DS(ON)
= 128 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching, low gate charge (26nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
200
±
20
3.0
20
3.0
1.8
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS2170N3
FDS2170N3
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2170N7 | 功能描述:MOSFET 200V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS222-TB | 制造商:Thomas & Betts 功能描述:3/4,2G-DEEP BX,IRON, DBL-HUB, D-END 制造商:Thomas & Betts 功能描述:Fittings Gang Box 0.75inch Female Iron |
| FDS2570 | 功能描述:MOSFET SO-8 N-CH 150V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2570 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS2570_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel PowerTrench MOSFET |
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