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参数资料
| 型号： | FDS2570 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 232K |
| 代理商： | FDS2570 |
June 2000
PRELIMINARY
FDS2570
150V N-Channel PowerTrench
MOSFET
2000 Fairchild Semiconductor Corporation
FDS2570 Rev B(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
4A, 150 V.
R
DS(ON)
= 0.072
@ V
GS
= 10 V
R
DS(ON)
= 0.080
@ V
GS
= 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
Ratings
150
±
20
4
30
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
2.5
1.2
1.0
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS2570
FDS2570
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2570 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS2570_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel PowerTrench MOSFET |
| FDS2572 | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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