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参数资料
| 型号： | FDS2570 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 232K |
| 代理商： | FDS2570 |
FDS2570 Rev B(W)
Typical Characteristics
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5.0V
3.5V
V
GS
= 10V
4.0V
4.5V
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
5.0V
4.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 4.3 A
V
GS
= 10 V
0.04
0.08
0.12
0.16
0.2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 2.2 A
T
A
= 25
o
C
T
A
= 125
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
25
o
C
V
DS
= 10 V
T
A
= 125
o
C
-55
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
25
o
C
V
GS
= 0V
T
A
= 125
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2570 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS2570_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel PowerTrench MOSFET |
| FDS2572 | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2572_Q | 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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