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参数资料
| 型号： | FDS3170N7 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 100V N-Channel PowerTrench MOSFET |
| 中文描述： | 6.7 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FLMP, SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 208K |
| 代理商： | FDS3170N7 |
May 2003
2003 Fairchild Semiconductor Corporation
FDS3170N7 Rev C1(W)
FDS3170N7
100V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
6.7 A, 100 V. R
DS(ON)
= 26 m
@ V
GS
= 10 V
R
DS(ON)
= 28 m
@ V
GS
= 6.0 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching, low gate charge
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
3
2
1
5
6
7
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
100
±
20
6.7
60
3.0
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
P
D
T
J
, T
STG
(Note 1a)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
0.5
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS3170N7
FDS3170N7
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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