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参数资料
| 型号： | FDS3572 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 8.9 A, 80 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/11页 |
| 文件大小： | 628K |
| 代理商： | FDS3572 |
2003 Fairchild Semiconductor Corporation
FDS3572 Rev. A
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 21mH, I
= 7A.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
θ
JA
is measured with 1.0 in
copper on FR-4 board
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±
20V
80
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 8.9A, V
GS
= 10V
I
D
= 5.6A, V
GS
= 6V
I
D
= 8.9A, V
GS
= 10V,
T
A
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.014
0.019
0.016
0.029
-
0.027
0.032
C
ISS
C
OSS
C
RSS
Q
g(tot)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1990
320
85
31
4
9
5
7.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 8.9A
I
g
= 1.0mA
41
5.2
-
-
-
V
DD
= 40V, I
D
= 8.9A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
40
-
-
-
-
67
ns
ns
ns
ns
ns
ns
13
14
31
13
-
V
SD
Source to Drain Diode Voltage
I
SD
= 8.9A
I
SD
= 4.3A
I
SD
= 8.9A, dI
SD
/dt= 100A/
μ
s
I
SD
= 8.9A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
50
70
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相关代理商/技术参数 |
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|---|---|
| FDS3572 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 80V 8.9A SOIC |
| FDS3572_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3572_Q | 功能描述:MOSFET 80V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3580 | 功能描述:MOSFET SO-8 N-CH 80V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3580_00 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
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