- 您现在的位置：买卖IC网 > PDF目录375781 > FDS3612 (FAIRCHILD SEMICONDUCTOR CORP) 100V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDS3612 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100V N-Channel PowerTrench MOSFET |
| 中文描述： | 3400 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/5页 |
| 文件大小： | 91K |
| 代理商： | FDS3612 |
FDS3612 Rev B1(W)
Typical Characteristics
0
4
8
12
16
20
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
5.0V
V
GS
= 10V
4.0V
4.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
4.5V
5.0V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3.4A
V
GS
= 10V
0
0.1
0.2
0.3
0.4
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.7 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
-55
o
C
V
DS
= 10V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDS3670 | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK |
| FDS3672 | N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз |
| FDS3680 | 100V N-Channel PowerTrench MOSFET |
| FDS3682 | N-Channel PowerTrench MOSFET 100V, 6A, 35mз |
| FDS3690 | DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/AMMO |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3670 | 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3670_0011 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDS3672 | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
发布紧急采购，3分钟左右您将得到回复。