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参数资料
| 型号： | FDS3682 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 6A, 35mз |
| 中文描述： | 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/11页 |
| 文件大小： | 277K |
| 代理商： | FDS3682 |
2002 Fairchild Semiconductor Corporation
September 2002
FDS3682 Rev. B
F
FDS3682
N-Channel PowerTrench
MOSFET
100V, 6A, 35m
Features
r
DS(ON)
= 30m
(Typ.), V
GS
= 10V, I
D
= 6A
Q
g
(tot) = 19nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82755
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
A
= 25
°
C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θ
JA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
6.0
3.7
A
A
A
mJ
W
Figure 4
156
2.5
20
-55 to 150
E
AS
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50
80
25
o
C/W
o
C/W
o
C/W
Device Marking
FDS3682
Device
FDS3682
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
4
3
2
1
5
6
7
8
SO-8
Branding Dash
1
5
2
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3682_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3682_Q | 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3690 | 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3692 | 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3692 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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