参数资料
型号: FDS3682
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET 100V, 6A, 35mз
中文描述: 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 3/11页
文件大小: 277K
代理商: FDS3682
2002 Fairchild Semiconductor Corporation
FDS3682 Rev. B
F
Typical Characteristics
T
A
= 25
°
C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
1
2
3
4
5
6
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
R
θ
JA
=50
o
C/W
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
R
θ
JA
=50
o
C/W AT 10 SECONDS
1
10
100
10
-5
300
10
-4
10
-3
10
-2
t, PULSE WIDT10
-1
10
0
10
1
10
2
10
3
I
D
,
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
C
125
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FDS3682_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3682_Q 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3690 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3692 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3692 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8