参数资料
型号: FDS3682
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET 100V, 6A, 35mз
中文描述: 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 10/11页
文件大小: 277K
代理商: FDS3682
2002 Fairchild Semiconductor Corporation
FDS3682 Rev. B
F
SPICE Thermal Model
REV June 2002
FDS3682
Copper Area =1.0 in
2
CTHERM1 TH 8 4.0e-4
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 6.0e-2
CTHERM4 6 5 9.0e-2
CTHERM5 5 4 3.0e-1
CTHERM6 4 3 4.0e-1
CTHERM7 3 2 9.0e-1
CTHERM8 2 TL 2.0e0
RTHERM1 TH 8 5.0e-1
RTHERM2 8 7 6.0e-1
RTHERM3 7 6 4.0e0
RTHERM4 6 5 5.0e0
RTHERM5 5 4 8.0e0
RTHERM6 4 3 9.0e0
RTHERM7 3 2 15.0e0
RTHERM8 2 TL 23.0e0
SABER Thermal Model
Copper Area = 1.0 in
2
template thermal_model th tl
thermal_c th, tl
{
CTHERM1 TH 8 4.0e-4
CTHERM2 8 7 5.0e-3
CTHERM3 7 6 6.0e-2
CTHERM4 6 5 9.0e-2
CTHERM5 5 4 3.0e-1
CTHERM6 4 3 4.0e-1
CTHERM7 3 2 9.0e-1
CTHERM8 2 TL 2.0e0
RTHERM1 TH 8 5.0e-1
RTHERM2 8 7 6.0e-1
RTHERM3 7 6 4.0e0
RTHERM4 6 5 5.0e0
RTHERM5 5 4 8.0e0
RTHERM6 4 3 9.0e0
RTHERM7 3 2 15.0e0
RTHERM8 2 TL 23.0e0
}
RTHERM6
RTHERM8
RTHERM7
RTHERM5
RTHERM4
RTHERM3
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
7
JUNCTION
CASE
8
th
RTHERM2
RTHERM1
CTHERM7
CTHERM8
TABLE 1. THERMAL MODELS
COMPONANT
0.04 in
2
0.28 in
2
0.52 in
2
0.76 in
2
1.0 in
2
CTHERM6
3.2e-1
3.5e-1
4.0e-1
4.0e-1
4.0e-1
CTHERM7
8.5e-1
9.0e-1
9.0e-1
9.0e-1
9.0e-1
CTHERM8
0.3
1.8
2.0
2.0
2.0
RTHERM6
24
18
12
10
9
RTHERM7
36
21
18
16
15
RTHERM8
53
37
30
28
23
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FDS3682_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3682_Q 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3690 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3692 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3692 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8