- 您现在的位置：买卖IC网 > PDF目录375781 > FDS3682 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 100V, 6A, 35mз PDF资料下载
参数资料
| 型号： | FDS3682 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 6A, 35mз |
| 中文描述： | 6 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/11页 |
| 文件大小： | 277K |
| 代理商： | FDS3682 |
2002 Fairchild Semiconductor Corporation
FDS3682 Rev. B
F
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25
°
C, L = 8.7mH, I
= 6A.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal referance is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user
’
s board design.
3:
R
θ
JA
is measured with 1.0 in
2
(645 mm
2
) copper on FR-4 board
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 6A, V
GS
= 10V
I
D
= 3A, V
GS
= 6V
I
D
= 6A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.030
0.038
0.035
0.057
-
0.060
0.070
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
1300
190
45
19
2.4
6.0
3.6
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 6A
I
g
= 1.0mA
25
3.2
-
-
-
V
DD
= 50V, I
D
= 6A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
-
71
-
-
-
-
107
ns
ns
ns
ns
ns
ns
12
35
34
37
-
V
SD
Source to Drain Diode Voltage
I
SD
= 6A
I
SD
= 3A
I
SD
= 6A, dI
SD
/dt =100A/
μ
s
I
SD
= 6A, dI
SD
/dt =100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
50
75
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相关PDF资料 |
PDF描述 |
|---|---|
| FDS3690 | DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/AMMO |
| FDS3692 | N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? |
| FDS3812 | 80V N-Channel Dual PowerTrench MOSFET |
| FDS3890 | 80V N-Channel Dual PowerTrench MOSFET |
| FDS3912 | 100V Dual N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3682_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3682_Q | 功能描述:MOSFET 100V 6a .35Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3690 | 功能描述:MOSFET SO-8 N-CH 100V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3692 | 功能描述:MOSFET 100V 4.5a .3 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3692 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
发布紧急采购，3分钟左右您将得到回复。