- 您现在的位置：买卖IC网 > PDF目录375781 > FDS3672 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз PDF资料下载
参数资料
| 型号： | FDS3672 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз |
| 中文描述： | 7.5 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | SO-8 |
| 文件页数： | 4/11页 |
| 文件大小： | 266K |
| 代理商： | FDS3672 |
2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
0.01
0.1
1
10
100
1.0
10.0
100
300
300
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
10
μ
s
100ms
10ms
1s
100
μ
s
1ms
1
10
0.01
0.1
1
10
100
30
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
10
20
30
2.5
3.0
3.5
4.0
4.5
5.0
5.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
20
30
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
T
A
= 25
o
C
18
20
22
24
0
2
4
6
8
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
D
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 7.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相关PDF资料 |
PDF描述 |
|---|---|
| FDS3680 | 100V N-Channel PowerTrench MOSFET |
| FDS3682 | N-Channel PowerTrench MOSFET 100V, 6A, 35mз |
| FDS3690 | DIODE ZENER SINGLE 1000mW 7.5Vz 34mA-Izt 0.05 10uA-Ir 5Vr DO41-GLASS 5K/AMMO |
| FDS3692 | N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? |
| FDS3812 | 80V N-Channel Dual PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 7.5A, SOIC |
| FDS3672_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 7.5A, 22m?? |
| FDS3672_Q | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。