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参数资料
| 型号： | FDS3912 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 100V Dual N-Channel PowerTrench MOSFET |
| 中文描述： | 3 A, 100 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 125K |
| 代理商： | FDS3912 |
FDS3912 Rev C2(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 50 V, I
D
= 3 A
90
3.0
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
100
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
108
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
2
2.5
4
V
Gate Threshold Voltage
–6
mV/
°
C
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 3 A, T
J
= 125
°
C
V
GS
= 10 V,
V
DS
= 10V,
I
D
= 3 A
I
D
= 2.8 A
92
98
175
125
135
250
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 10 V
I
D
= 3 A
10
A
S
11
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
632
40
20
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
8.5
2
23
4.5
14
2.4
3.8
17
4
37
9
20
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 3 A,
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS3992 | 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS3992 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3992_04 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз |
| FDS3992_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDS3992_Q | 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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