参数资料
型号: FDS3912
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 100V Dual N-Channel PowerTrench MOSFET
中文描述: 3 A, 100 V, 0.125 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 4/6页
文件大小: 125K
代理商: FDS3912
FDS3912 Rev C2(W)
Typical Characteristics
0
4
8
12
16
20
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
4.5V
3.5V
V
GS
= 10V
5.0V
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.0V
5.0V
6.0V
4.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3A
V
GS
= 10V
0.05
0.1
0.15
0.2
0.25
0.3
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数
参数描述
FDS3992 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS3992 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8
FDS3992_04 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
FDS3992_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDS3992_Q 功能描述:MOSFET 100V 4.5a .62 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube