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参数资料
| 型号： | FDS4435A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel Logic Level PowerTrench⑩MOSFET |
| 中文描述： | 9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 637K |
| 代理商： | FDS4435A |
F
FDS4435 Rev. D
FDS4435
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
June 1999
Features
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Low gate charge (17nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
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| FDS4435BZ | 30 Volt P-Channel PowerTrench MOSFET |
| FDS4465 | P-Channel 1.8V Specified PowerTrench MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4435A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS4435BZ | 功能描述:MOSFET 30V.PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435BZ | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:P CHANNEL MOSFET, -30V, 8.8A, SOIC |
| FDS4435BZ_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ |
| FDS4435BZ_F021 | 制造商:Fairchild Semiconductor Corporation 功能描述:FDS4435BZ Series -30 V -8.8 A P-Channel PowerTrench MOSFET - SOIC-8 |
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