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参数资料
| 型号： | FDS4488 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.9 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 69K |
| 代理商： | FDS4488 |
FDS4488 Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 24 V,
V
GS
= 0 V
V
GS
= 25 V,
V
DS
= 0 V
V
GS
= –25 V, V
DS
= 0 V
21
mV/
°
C
μ
A
nA
nA
1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 7.9 A
V
GS
= 4.5 V, I
= 6.8 A
V
GS
= 10 V, I
D
= 7.9 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 7.9 A
I
D
= 250
μ
A
1
1.8
–6
15
21
22
24
3
V
Gate Threshold Voltage
mV/
°
C
m
22
30
35
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
927
241
97
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
7.4
7.5
25
5
9.5
3.3
3.1
15
15
40
10
13
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 7.9 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2.1
A
V
SD
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.7
1.2
V
22
20
nS
nC
I
F
= 7.9 A,
d
iF
/d
t
= 100 A/μs
Notes :
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size
paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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