参数资料
型号: FDS4559
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 60V Complementary PowerTrench MOSFET
中文描述: 4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SO-8, 8 PIN
文件页数: 1/8页
文件大小: 147K
代理商: FDS4559
April 2002
FDS4559
60V Complementary PowerTrench
MOSFET
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
LCD backlight inverter
Features
Q1
:
N-Channel
4.5 A, 60 V
R
DS(on)
= 55 m
@ V
GS
= 10V
R
DS(on)
= 75 m
@ V
GS
= 4.5V
Q2
:
P-Channel
–3.5 A, –60 V R
DS(on)
= 105 m
@ V
GS
= –10V
R
DS(on)
= 135 m
@ V
GS
= –4.5V
S
D
SO-8
D
D
D
G
D1
D1
D2
D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
60
±
20
4.5
20
–60
±
20
–3.5
–20
V
V
A
W
°
C
(Note 1a)
- Pulsed
2
1.6
1.2
1
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
-55 to +175
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDS4559
FDS4559
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
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