参数资料
型号: FDS4559
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 60V Complementary PowerTrench MOSFET
中文描述: 4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SO-8, 8 PIN
文件页数: 7/8页
文件大小: 147K
代理商: FDS4559
FDS4559 Rev C1(W)
Typical Characteristics: Q1
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 4.5A
V
DS
= 10V
20V
30V
0
100
200
300
400
500
600
700
800
900
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
10ms
1m
100
μ
s
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
0
10
20
30
40
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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