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参数资料
| 型号： | FDS4559 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 60V Complementary PowerTrench MOSFET |
| 中文描述： | 4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8, 8 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 147K |
| 代理商： | FDS4559 |
FDS4559 Rev C1(W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source
Avalanche Current
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
DD
= 30 V,
I
D
= 4.5 A
Q1
90
mJ
Q1
4.5
A
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 48 V, V
GS
= 0 V
V
DS
= –48 V, V
GS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
60
–60
V
Breakdown Voltage
58
–49
mV/
°
C
μ
A
nA
1
–1
+100
+100
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 10 V, I
D
= 4.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= –10 V, I
D
= –3.5 A
V
GS
= –10 V, I
D
= –3.5 A, T
J
= 125
°
C
V
GS
= –4.5 V, I
D
= –3.1 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= –10 V, V
DS
= –5 V
V
DS
= 10 V, I
D
= 4.5 A
V
DS
= –5 V, I
D
= –3 5 A
Q1
Q2
Q1
Q2
Q1
1
–1
2.2
–1.6
–5.5
4
42
72
55
82
130
105
3
–3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
55
94
75
105
190
135
Q2
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
g
FS
Forward Transconductance
14
9
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
650
759
80
90
35
39
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
Q1
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
V
= –30 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11
7
8
10
19
19
6
12
12.5
15
2.4
2.5
2.6
3.0
20
14
18
20
35
34
15
22
18
21
ns
ns
ns
ns
nC
nC
nC
Q1
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= –30 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
Q1
V
DS
= 30 V, I
D
= 4.5 A, V
GS
= 10 V
Q2
V
DS
= –30 V, I
D
= –3.5 A, V
GS
= –10V
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS4559 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS4559_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V Complementary PowerTrench???MOSFET |
| FDS4559_F085 | 功能描述:MOSFET 60V Complementary PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4672A | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4672A_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:40V N-Channel PowerTrench㈢ MOSFET |
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