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参数资料
| 型号： | FDS6982S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFet⑩ |
| 中文描述： | 6.3 A, 30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/12页 |
| 文件大小： | 256K |
| 代理商： | FDS6982S |
FDS6982S Rev B (W)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
10
10
14
34
21
14
7
17.5
8.5
6.3
2.4
5.4
3.1
18
18
18
25
55
34
23
14
26
12
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q2
V
DS
= 15 V, I
D
= 11.5 A, V
GS
= 5 V
Q1
V
DS
= 15 V, I
D
= 6.3 A,V
GS
= 5 V
nC
Drain
–
Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
t
RR
Q
RR
V
SD
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
20
19.7
0.42
0.56
0.70
ns
I
F
= 11.5A,
d
iF
/d
t
= 300 A/μs
(Note 3)
nC
V
V
GS
= 0 V, I
S
= 3 A
V
GS
= 0 V, I
S
= 6 A
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
(Note 2)
Q2
Q2
Q1
.7
1.2
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in
pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
相关PDF资料 |
PDF描述 |
|---|---|
| FDS6984AS_NL | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| FDS6984S | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6984SQ1 | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| FDS6986AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6982S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6982S_D84Z | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6982S_NL | 制造商:Fairchild 功能描述:S08/SCHOTTKY,NCH,30V,500A(LEADFREE) |
| FDS6982S_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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