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参数资料
| 型号： | FDS6986AS |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| 中文描述： | 6.5 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 177K |
| 代理商： | FDS6986AS |
FDS6986AS Rev A (X)
Electrical Characteristics
(continued)
Symbol
Switching Characteristics
(Note 2)
Q
g(TOT)
Total Gate Charge, Vgs = 10V
Q
g
Total Gate Charge, Vgs = 5V
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
12
5.6
6.5
2.0
2.3
1.5
2.1
14
17
8
9
nC
nC
nC
nC
Q2:
V
DS
= 15 V, I
D
= 7.9 A
Q1:
V
DS
= 15 V, I
D
= 6.5 A
Q2
Q1
Q2
3.0
1.3
A
ns
T
rr
Q
rr
T
rr
Q
rr
V
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
15
6
20
12
0.6
0.8
I
F
= 10 A,
d
iF
/d
t
= 300 A/μs
(Note 3)
nC
ns
I
F
= 6.5 A,
d
iF
/d
t
= 100 A/μs
(Note 3)
Q1
nC
V
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
Q2
Q1
0.7
1.2
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
2
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
4.
FDS6986AS_NL is a lead free product. FDS6986AS_NL marking will appear on the reel label.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986AS_NBBD005 | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 功能描述:MOSFET 30V Dual SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6990 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6990A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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