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参数资料
| 型号： | FDS6986S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 6.5 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 200K |
| 代理商： | FDS6986S |
FDS6986S Rev C1 (W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
30
30
V
Breakdown Voltage
20
23
mV/
°
C
μ
A
500
1
100
V
GS
= 16 V, V
DS
= 0 V
NA
nA
I
GSSR
Gate-Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V
V
GS
= –16 V, V
DS
= 0 V
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 1 mA, Referenced to 25
°
C
Q2
Q1
Q2
1
1
2.4
1.6
–6
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 uA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7.9 A
V
GS
= 10 V, I
D
= 7.9 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7 A
V
GS
= 10 V, I
D
= 6.5 A
V
GS
= 10 V, I
D
= 6.5 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 5.6 A
V
GS
= 10 V, V
DS
= 5 V
Q1
Q2
–4
16
24
23
25
37
30
mV/
°
C
20
32
28
29
49
38
R
DS(on)
Static Drain-Source
On-Resistance
Q1
m
I
D(on)
On-State Drain Current
Q2
Q1
Q2
Q1
30
20
A
S
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 7.9 A
V
DS
= 5 V, I
D
= 6.5 A
23
22
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1233
695
344
117
106
58
1.4
1.7
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
R
G
Gate Resistance
V
GS
= 15mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8
7
5
16
14
10
9
40
36
20
5
16
9
ns
ns
ns
ns
nC
nC
nC
4.5
25
20
11
2.5
11
6.5
5
2.5
4
1.3
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2:
V
DS
= 15 V, I
D
= 7.9 A, V
GS
= 5 V
Q1:
V
DS
= 15 V, I
D
= 6.5 A, V
GS
= 5 V
F
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PDF描述 |
|---|---|
| FDS6990S | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990 | Dual 30V N-Channel PowerTrench SyncFET |
| FDS6990A | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6990AS | Dual 30V N-Channel PowerTrench SyncFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6986S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS6990 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6990A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
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