参数资料
型号: FDS6986S
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩
中文描述: 6.5 A, 30 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 7/9页
文件大小: 200K
代理商: FDS6986S
FDS6986S Rev C1 (W)
Typical Characteristics Q1
0
2
4
6
8
10
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 6.5A
V
DS
= 5V
15V
10V
0
200
400
600
800
1000
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
100μs
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 135 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
相关PDF资料
PDF描述
FDS6990S Dual 30V N-Channel PowerTrench SyncFET
FDS6990 Dual 30V N-Channel PowerTrench SyncFET
FDS6990A Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDS6990AS Dual 30V N-Channel PowerTrench SyncFET
FDS6990AS_NL Dual 30V N-Channel PowerTrench SyncFET
相关代理商/技术参数
参数描述
FDS6986S 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS6990 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET
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FDS6990A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDS6990A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8