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参数资料
| 型号： | FDS6990 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 双30V的N沟道的PowerTrench式SyncFET |
| 文件页数： | 2/6页 |
| 文件大小： | 86K |
| 代理商： | FDS6990 |
FDS6990S Rev B (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= 1 mA
30
V
Breakdown Voltage Temperature
I
D
= 1 mA, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
500
100
–100
μ
A
nA
nA
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 7.5 A, T
J
=125
°
C
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 10 V,
V
DS
= 15 V,
1
2.2
3
V
Gate Threshold Voltage
–6
mV/
°
C
17.5
27
24
22
35
30
m
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
On–State Drain Current
V
DS
= 5 V
I
D
= 10 A
20
A
Forward Transconductance
22
S
1233
344
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
106
pF
(Note 2)
8
5
25
16
10
40
ns
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
11
11
5
4
20
16
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 10 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
2.9
A
V
SD
V
GS
= 0 V,
I
S
= 2.9 A
(Note 2)
0.5
0.7
V
17
12.5
nS
nC
I
F
= 10A
d
iF
/d
t
= 300 A/μs
(Note 3)
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in
pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6990A | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS6990A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS6990A_D84Z | 功能描述:MOSFET S0-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS6990A_Q | 功能描述:MOSFET SO-8 DUAL N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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