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参数资料
| 型号： | FDS6994S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual Notebook Power Supply N-Channel PowerTrench SyncFET |
| 中文描述： | 6.9 A, 30 V, 0.021 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOP-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 256K |
| 代理商： | FDS6994S |
FDS6994S Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
Q2
Q1
Q2
Q1
All
30
30
V
BV
DSS
T
J
I
DSS
–23
–22
mV/
°
C
μ
A
500
1
±
100
I
GSS
V
GS
=
±
16 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
Q2
Q1
1
1
1.5
1.9
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
°
C
I
D
= 250 uA, Referenced to 25
°
C
Q2
Q1
2
4
mV/
°
C
V
GS
= 10 V, I
D
= 8.2A
V
GS
= 10 V, I
D
= 8.2 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 7.6 A
V
GS
= 10 V, I
D
= 6.9 A
V
GS
= 10 V, I
D
= 6.9 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 6.2 A
Q2
10
15
11
18
26
21
15
24
18
21
34
26
R
DS(on)
Static Drain-Source
On-Resistance
Q1
m
Dynamic Characteristics
C
iss
Input Capacitance
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
2762
771
534
208
199
84
1.7
2.5
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
R
g
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
8
8
5
46
25
17
5
25
8
6
2
7
3
20
15
17
9
70
40
30
9
35
12
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2:
V
DS
= 15 V, I
D
= 8.2 A, V
GS
= 5 V
Q1:
V
DS
= 15 V, I
D
= 6.9 A, V
GS
= 5 V
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS6994S_Q | 功能描述:MOSFET NChannel PowerTrench Notebook Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7060N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDS7064N | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS7064N7 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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