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参数资料
| 型号： | FDS8876 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12.5 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 3/12页 |
| 文件大小： | 262K |
| 代理商： | FDS8876 |
F
FDS8876 Rev. A
www.fairchildsemi.com
3
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 1mH, I
= 14.5A, V
= 30V, V
= 10V.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
JA
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
FDS8876_NL is lead free product. FDS8876_NL marking will appear on the reel label.
V
DD
= 15V, I
D
= 12.5A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
8
34
53
19
-
63
-
-
-
-
108
ns
ns
ns
ns
ns
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 12.5A
I
SD
= 2.1A
I
SD
= 12.5A, dI
SD
/dt=100A/
μ
s
I
SD
= 12.5A, dI
SD
/dt=100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
21
10
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
相关PDF资料 |
PDF描述 |
|---|---|
| FDS8876_NL | N-Channel PowerTrench MOSFET |
| FDS8878 | N-Channel PowerTrench MOSFET |
| FDS8880 | N-Channel PowerTrench MOSFET |
| FDS8896 | N-Channel PowerTrench?? MOSFET |
| FDS8926A | Dual N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8876_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ |
| FDS8876_F123 | 功能描述:MOSFET 30V N-CHAN 12.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8876_NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDS8878 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8878_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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