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参数资料
| 型号： | FDS8880 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 11.6 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 4/12页 |
| 文件大小： | 259K |
| 代理商： | FDS8880 |
F
FDS8880 Rev. A1
www.fairchildsemi.com
4
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
2
4
6
8
10
12
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
R
θ
JA
=50
o
C/W
V
GS
= 10V
V
GS
= 4.5V
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
R
θ
JA
=50
o
C/W
10
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1400
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
V
GS
= 10V
V
GS
= 4.5V
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS8880 | 制造商:Fairchild Semiconductor Corporation 功能描述:; Transistor Type:MOSFET; Leaded Process |
| FDS8880_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8880_F123 | 功能描述:MOSFET 30V N-CHAN 11.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8882 | 功能描述:MOSFET 30V 9A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS8884 | 功能描述:MOSFET 30V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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