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参数资料
| 型号： | FDS9431A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-Channel 2.5V Specified MOSFET |
| 中文描述： | 3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 204K |
| 代理商： | FDS9431A |
F
FDS9431A Rev. A2
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250 A
I
D
= -250 A,Referenced to 25 C
-20
V
Breakdown Voltage Temperature
-28
mV/ C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
-1
100
A
nA
V
GS
= -8 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250 A
I
D
= -250 A,Referenced to 25 C
-0.4
-0.6
2
-1
V
Gate Threshold Voltage
mV/ C
V
GS
= -4.5 V, I
D
= -3.5 A
V
GS
= -2.5 V, I
D
= -3.0 A
V
GS
= -4.5 V, I
D
= -3.5 A
T
J
=125 C
V
GS
= -4.5 V, V
DS
=-5 V
V
DS
= -5 V, I
D
= -3.5 A
0.110
0.140
0.155
0.130
0.180
0.220
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-10
A
S
6.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
405
170
45
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
6.5
20
31
21
6
0.8
1.3
13
35
50
35
8.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -5 V, I
D
= -3.5 A,
V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
-2.1
-1.2
A
V
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.7
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 50
°
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
°
C/W on a minimum
mounting
pad.
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| FDS9431A_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified MOSFET |
| FDS9431A_F085 | 功能描述:MOSFET SO8 SINGLE PCH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDS9435A_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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