参数资料
型号: FDS9435A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single P-Channel Enhancement Mode Field Effect Transistor
中文描述: 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: LEAD FREE, SO-8
文件页数: 3/8页
文件大小: 244K
代理商: FDS9435A
FDS9435A Rev.C
0
10
20
30
40
50
0.5
1
1.5
2
2.5
3
- I , DRAIN CURRENT (A)
D
V = -3.5 V
R
D
-10V
-4.5V
-4.0V
-8.0V
-5.0V
-6.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -5.3A
Figure 3. On-Resistance Variation with
Temperature
.
0
2
4
6
8
10
0
10
20
30
40
50
-V , GATE TO SOURCE VOLTAGE (V)
-
V = -5V
D
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics
.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
60
-
S
25°C
-55°C
V = 0V
TJ
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
-V , GATE TO SOURCE VOLTAGE (V)
R
D
I = -2.7A
D
T = 125°C
T = 25°C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0
10
20
30
40
50
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
-4.5V
-5.0V
-4.0V
-6.0V
-3.5V
V = -10V
-7.0V
相关PDF资料
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相关代理商/技术参数
参数描述
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FDS9435A-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS9435A Series 30 V 50 mOhm P-Channel PowerTrench Mosfet - SOIC-8
FDS9926A 功能描述:MOSFET SO-8 SGL N-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS9926A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS9926A_03 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET