参数资料
型号: FDS9435A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: Single P-Channel Enhancement Mode Field Effect Transistor
中文描述: 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: LEAD FREE, SO-8
文件页数: 4/8页
文件大小: 244K
代理商: FDS9435A
FDS9435A Rev.C
0
5
10
15
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
-15V
I = -5.3A
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.1
1
10
100
-
D
RDS(ON) LIMIT
A
V = -10V
SINGLE PULSE
R = 125°C/W
T = 25°C
A
JA
DC
1s
100ms
10ms
1ms
100us
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R = 125°C/W
T = 25°C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
3
10
30
50
100
200
500
1000
2000
C
C ss
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 125
°C/W
T - T = P * R JA
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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FDS9926A 功能描述:MOSFET SO-8 SGL N-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS9926A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8
FDS9926A_03 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET