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参数资料
| 型号： | FDS9933A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 3.8 A, 20 V, 0.075 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOIC-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 191K |
| 代理商： | FDS9933A |
F
FDS9933A Rev. C
DMOS Electrical Characteristics
T
A
= 25°C unless otherwise noted
BV
DSS
Β
V
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
-16
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
V
GS(th)
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.8
2.5
-1.5
V
mV/
°
C
V
GS
= -4.5 V, I
D
= -3.8 A
V
GS
= -4.5 V, I
D
= -3.8 A, T
J
= 125
°
C
V
GS
= -2.5 V, I
D
= -3.3 A
V
GS
= -4.5 V, V
DS
= -5.0 V
V
DS
= -4.5 V, I
D
= -3.8 A
0.058
0.086
0.084
0.075
0.12
0.105
A
S
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-10
10
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V, f = 1.0 MHz
600
175
80
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 6.0
6
9
31
28
7
1.3
2
12
18
50
42
10
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= -3.8 A,
V
GS
= -4.5 V
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
-1.3
-1.2
A
V
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.75
Dynamic Characteristics
Switching Characteristics
(Note 2)
Off Characteristics
On Characteristics
(Note 2)
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 78
°
C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135
°
C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9933A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS9933A_Q | 功能描述:MOSFET SO-8 DUAL P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9933BZ | 功能描述:MOSFET -20V 2.5V Dual P-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9934C | 功能描述:MOSFET 20V Complementary PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9934C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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