参数资料
型号: FDS9934C
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual N- and P-Channel enhancement mode power field effect transistors
中文描述: 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: SO-8
文件页数: 4/8页
文件大小: 158K
代理商: FDS9934C
FDS9934C Rev C(W)
Typical Characteristics: Q1 (N-Channel)
0
4
8
12
16
20
0
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
V
GS
= 4.5V
3.5
2.5V
2.0V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
15
20
I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.0V
4.5V
3.0V
2.5V
3.5V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 6.5A
V
GS
= 4.5V
0.01
0.03
0.05
0.07
0.09
0.11
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.25A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
1
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
2.5
3
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相关PDF资料
PDF描述
FDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9945 60V N-Channel PowerTrench MOSFET
FDS9953A Dual 30V P-Channel PowerTrench MOSFET
FDSS2407 N-Channel Dual MOSFET
相关代理商/技术参数
参数描述
FDS9934C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDS9936 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9936A 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS9945 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes