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参数资料
| 型号： | FDS9953A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Dual 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 2.9 A, 30 V, 0.13 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 73K |
| 代理商： | FDS9953A |
May 2001
FDS9953A
Dual 30V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDS9953A Rev B(W)
General Description
This PChannel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–2.9 A, –30 V
R
DS(ON)
= 130 m
@ V
GS
= –10 V
R
DS(ON)
= 200 m
@ V
GS
= –4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
S
SO-8
D
D
D2
D2
D1D1
S2
G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±
25
±
2.9
±
10
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS9953A
FDS9953A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS9953A_Q | 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9958 | 功能描述:MOSFET -60V Dual P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9958_F085 | 功能描述:MOSFET Dual P-Ch PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS9958F085 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench?? MOSFET |
| FDSAS2062 | 功能描述:标准时钟振荡器 62.5 MHz, 2.5V CMOS SAS2 RoHS:否 制造商:AVX 产品:Standard Clock Oscillators 封装 / 箱体:7 mm x 5 mm 频率:75 MHz 频率稳定性:50 PPM 电源电压:2.5 V 负载电容: 端接类型:SMD/SMT 最小工作温度:0 C 最大工作温度:+ 70 C 输出格式:LVDS 尺寸: 封装:Reel 系列: |
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