- 您现在的位置：买卖IC网 > PDF目录375785 > FDT434 (Fairchild Semiconductor Corporation) P-Channel 2.5V Specified PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDT434 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | P沟道MOSFET的为2.5V指定的PowerTrench |
| 文件页数： | 1/8页 |
| 文件大小： | 244K |
| 代理商： | FDT434 |
January 2000
1999 Fairchild Semiconductor Corporation
FDT434P Rev. C1 (W)
FDT434P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
advanced
Applications
Low Dropout Regulator
DC/DC converter
Load switch
Motor driving
Features
–5.5 A, –20 V. R
DS(ON)
= 0.050
@ V
GS
= –4.5 V
R
DS(ON)
= 0.070
@ V
GS
= –2.5 V.
Low gate charge (13nC typical)
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability in a
widely used surface mount package.
G
D
S
D
SOT-223
S
G
D
D
G
D
S
SOT-223
*
(J23Z)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
8
–6
–30
3
1.3
1.1
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
42
12
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
434
FDT434P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDT434P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDT439N | N-Channel 2.5V Specified EnhancementMode Field Effect Transistor |
| FDT457N | CAP CER 2.2UF 16V 20% X7R 1210 |
| FDT458P | 30V P-Channel PowerTrench MOSFET |
| FDT459N | N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT434P | 功能描述:MOSFET SOT-223 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT434P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDT434P_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench??? MOSFET |
| FDT434P_Q | 功能描述:MOSFET SOT-223 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT439N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。