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参数资料
| 型号： | FDT458P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 3.4 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 99K |
| 代理商： | FDT458P |
June 2001
FDT458P
30V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
P-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
Applications
Battery chargers
Motor drives
Features
3.4 A, –30 V. R
DS(ON)
= 130 m
@ V
GS
= 10 V
R
DS(ON)
= 200 m
@ V
GS
= 4.5 V
Fast switching speed
Low gate charge (2.5 nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package
G
D
S
D
SOT-223
S
G
D
D
G
D
S
SOT-223
*
(J23Z)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
– 30
±
20
3.4
10
3.0
1.3
1.1
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
42
12
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
458P
FDT458P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDT458P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT459N | 功能描述:MOSFET SOT-223 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT459NJ23Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223 |
| FDT461N | 功能描述:MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDT-500A | 制造商:MERRIMAC 制造商全称:MERRIMAC 功能描述:FREQUENCY DOUBLERS |
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