参数资料
型号: FDT458P
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V P-Channel PowerTrench MOSFET
中文描述: 3.4 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
文件页数: 3/5页
文件大小: 99K
代理商: FDT458P
FDT458P Rev. B(W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -10V
-3.0V
-3.5V
-4.0V
-4.5V
-5.0V
V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.9
1.1
1.3
1.5
1.7
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -3.4A
V
GS
= -10V
0.05
0.15
0.25
0.35
0.45
0.55
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相关代理商/技术参数
参数描述
FDT458P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDT459NJ23Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 6.5A I(D) | SOT-223
FDT461N 功能描述:MOSFET NCH LOGIC ENHANCEMEN MODFIELD EFFECT TRAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDT-500A 制造商:MERRIMAC 制造商全称:MERRIMAC 功能描述:FREQUENCY DOUBLERS