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参数资料
| 型号： | FDT461N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 267K |
| 代理商： | FDT461N |
2004 Fairchild Semiconductor Corporation
April 2004
FDT461N Rev. A1
F
FDT461N
N-Channel Logic Level PowerTrench
MOSFET
100V, 0.4A, 2.5
Features
r
DS(ON)
= 1.45
(Typ.), V
GS
= 4.5V, I
D
= 0.4A
Q
g
(tot) = 2.36nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
Applications
Servo Motor Load Control
DC-DC converters
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θ
JA
= 110
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θ
JA
= 110
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
0.54
0.4
Figure 4
6.3
1.13
9
-55 to 150
A
A
A
mJ
W
E
AS
P
D
mW/
o
C
o
C
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in
2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
2
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in
2
110
128
147
o
C/W
o
C/W
o
C/W
Device Marking
461
Device
FDT461N
Package
SOT-223
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
S
G
D
D
SOT-223
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