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参数资料
| 型号： | FDT461N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 267K |
| 代理商： | FDT461N |
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
0.01
0.1
1
1
10
120
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
1ms
10ms
0
0.4
0.8
1.2
1.6
1.5
2.0
2.5
3.0
3.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0.4
0.8
1.2
1.6
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 3V
V
GS
= 4.5V
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
9
10
I
D
= 0.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 0.54A
r
D
,
O
)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 0.54A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
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