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参数资料
| 型号： | FDT459N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 6.5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 89K |
| 代理商： | FDT459N |
FDT459NRev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
V = 5V
10V
I = 6.5A
15V
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.05
0.1
0.5
1
2
5
10
20
40
I
D
RDS(ON) LIMIT
DC
1s
100ms
10ms
1ms
V =10V
SINGLE PULSE
R = See Note 1c
T = 25°C
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
3
10
30
30
50
100
200
400
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
0
0.01
0.1
1
10
100
300
40
80
120
160
200
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R = see note 1c
T = 25°C
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