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参数资料
| 型号： | FDU068AN03L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз |
| 中文描述： | 35 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | IPAK-3 |
| 文件页数： | 2/11页 |
| 文件大小： | 298K |
| 代理商： | FDU068AN03L |
2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
V
GS(TH)
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 0.43mH, I
AS
= 28A.
Device Marking
FDD068AN03L
FDU068AN03L
Device
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
FDD068AN03L
FDU068AN03L
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0047 0.0057
0.0057 0.0068
-
0.0075 0.0092
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
2525
490
300
2.1
46
24
2.3
6.9
4.6
9.8
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
60
32
3.0
-
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 4.5V, R
GS
= 6.2
-
-
-
-
-
-
-
283
-
-
-
-
137
ns
ns
ns
ns
ns
ns
18
171
31
61
-
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
I
SD
= 15A
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
27
12
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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