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参数资料
| 型号： | FDU068AN03L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз |
| 中文描述： | 35 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封装： | IPAK-3 |
| 文件页数： | 3/11页 |
| 文件大小： | 298K |
| 代理商： | FDU068AN03L |
2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
125
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
CURRENT LIMITED
BY PACKAGE
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
30
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 5V
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