参数资料
型号: FDU8870
厂商: Fairchild Semiconductor
文件页数: 4/11页
文件大小: 0K
描述: MOSFET N-CH 30V 160A I-PAK
标准包装: 1,800
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 160A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.9 毫欧 @ 35A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 118nC @ 10V
输入电容 (Ciss) @ Vds: 5160pF @ 15V
功率 - 最大: 160W
安装类型: 通孔
封装/外壳: TO-251-3 短引线,IPak,TO-251AA
供应商设备封装: I-Pak
包装: 管件
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
100
10 μ s
100 μ s
100
STARTING T J = 25 o C
10
1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1ms
10ms
DC
10
1
STARTING T J = 150 o C
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1
10
60
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80 μ s
100
V GS = 5V
DUTY CYCLE = 0.5% MAX
80
V DD = 15V
80
60
40
T J = 175 o C
T J = 25 o C
60
40
V GS = 10 V
V GS = 3V
V GS = 4V
V GS = 2.5V
20
T J =
-55 o C
20
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
1.5
2.0 2.5
3.0
0
0
0.2
0.4
0.6
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
8
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
6
1.2
1.0
4
I D = 1A
0.8
2
0.6
V GS = 10V, I D = 35A
2
4
6
8
10
-80
-40
0 40 80 120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
?2004 8 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8870 / FDU8870 Rev. C 2
相关PDF资料
PDF描述
FDU8874 MOSFET N-CH 30V 116A I-PAK
FDU8876 MOSFET N-CH 30V 73A I-PAK
FDU8878 MOSFET N-CH 30V 40A I-PAK
FDU8882 MOSFET N-CH 30V 55A I-PAK
FDU8896 MOSFET N-CH 30V 94A I-PAK
相关代理商/技术参数
参数描述
FDU8874 功能描述:MOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDU8876 功能描述:MOSFET 30V 73A 8.2 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDU8878 功能描述:MOSFET 30V N-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDU8878_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm
FDU8880 功能描述:MOSFET 30V 58A 10 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube