参数资料
型号: FDU8876
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 15 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封装: IPAK-3
文件页数: 10/11页
文件大小: 272K
代理商: FDU8876
2004 Fairchild Semiconductor Corporation
FDD8876 / FDU8876 Rev. A2
F
PSPICE Thermal Model
REV 23 January 2004
FDD8876T
CTHERM1 TH 6 7e-4
CTHERM2 6 5 9e-4
CTHERM3 5 4 2e-3
CTHERM4 4 3 2.5e-3
CTHERM5 3 2 6e-3
CTHERM6 2 TL 1.1e-2
RTHERM1 TH 6 7.0e-2
RTHERM2 6 5 1.1e-1
RTHERM3 5 4 2.2e-1
RTHERM4 4 3 3.2e-1
RTHERM5 3 2 4.9e-1
RTHERM6 2 TL 5e-1
SABER Thermal Model
SABER thermal model FDD8876T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =7e-4
ctherm.ctherm2 6 5 =9e-4
ctherm.ctherm3 5 4 =2e-3
ctherm.ctherm4 4 3 =2.5e-3
ctherm.ctherm5 3 2 =6e-3
ctherm.ctherm6 2 tl =1.1e-2
rtherm.rtherm1 th 6 =7.0e-2
rtherm.rtherm2 6 5 =1.1e-1
rtherm.rtherm3 5 4 =2.2e-1
rtherm.rtherm4 4 3 =3.2e-1
rtherm.rtherm5 3 2 =4.9e-1
rtherm.rtherm6 2 tl =5e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相关PDF资料
PDF描述
FDD8876 N-Channel PowerTrench MOSFET
FDU8878 N-Channel PowerTrench MOSFET
FDD8878 N-Channel PowerTrench MOSFET
FDU8880 N-Channel PowerTrench MOSFET 30V, 58A, 10m
FDU8882 N-Channel PowerTrench MOSFET
相关代理商/技术参数
参数描述
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FDU8878_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 30V, 40A, 15m ohm
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FDU8880_08 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDU8882 功能描述:MOSFET 30V 55A 11 OHM NCH PWR TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube