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参数资料
| 型号： | FDV305N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 172K |
| 代理商： | FDV305N |
FDV305N Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
I
D
= 250
μ
A,Referenced to 25
°
C
15
mV/
°
C
V
DS
= 16 V,
V
GS
= 12 V,
V
GS
= –12 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 4.5V, I
D
= 0.9 A, T
J
= 125
°
C
V
GS
= 4.5V,
V
DS
= 5 V
V
DS
= 5V,
I
D
= 0.9 A
I
D
= 250
μ
A
0.6
1
1.5
V
Gate Threshold Voltage
–3
mV/
°
C
I
D
= 0.9 A
I
D
= 0.7 A
164
235
220
3
220
300
303
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
1
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
109
30
14
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
4.5
7
8
1.4
1.1
0.26
0.26
9
14
16
2.8
1.5
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 0.9 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
0.29
1.2
A
V
V
GS
= 0 V,
I
S
= 0.29 A
0.75
7.4
2.2
nS
nC
I
F
= 0.9 A,
d
iF
/d
t
= 100 A/μs
Notes:
1.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDV305N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDV305N_NF40 | 功能描述:MOSFET 20V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDV305N_Q | 功能描述:MOSFET 20V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-V30W | 制造商:PANASONIC INDUSTRIAL AUTOMATION SALES 功能描述:FIBER 3MM REFLECT R1 BEND 制造商:Panasonic Electric Works 功能描述:SENSOR, FIBRE OPTIC, REFLECTIVE, 20MM; Fiber Optic Sensor Type:Reflective; Sensing Range Max:20mm; Sensing Range:0mm to 20mm ;RoHS Compliant: Yes |
| FDV-3X | 制造商:PREMO 制造商全称:PREMO CORPORATION S.L 功能描述:IEC Connector Filter |
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